NSN: 5961-00-855-3463
Semiconductor Devices and Associated Hardware
TRANSISTOR
- Newark Electronics Corporation
- Gilbert Engineering Co Inc/Incon
- Freescale Semiconductor Inc.
- Raytheon Company
- Telcom Semiconductor Inc
- Northrop Grumman Systems Corporation
- Solid State Devices Inc.
- Semitronics Corp
- Semicoa Corporation
- Advanced Semiconductor Inc.
- Us Army Communications &
- Electronic Industries Association
- Electronic Industries Association
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
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Power Rating Per Characteristic
350.0 milliwatts small-signal input power, common-collector minimum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
20.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Terminal Length
0.500 inches minimum
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Overall Length
0.188 inches nominal
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Inclosure Material
metal
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Overall Diameter
0.220 inches nominal
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Specification/Standard Data
80131-release5333 professional/industrial association specification
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Terminal Circle Diameter
0.100 inches nominal
Related Parts by Category
Related Manufacturers
- Newark Electronics Corporation
- Gilbert Engineering Co Inc/Incon
- Freescale Semiconductor Inc.
- Raytheon Company
- Telcom Semiconductor Inc
- Northrop Grumman Systems Corporation
- Solid State Devices Inc.
- Semitronics Corp
- Semicoa Corporation
- Advanced Semiconductor Inc.
- Us Army Communications &
- Electronic Industries Association
- Electronic Industries Association