NSN: 5961-00-868-9837
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
glass and metal
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Overall Diameter
0.420 inches nominal
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Iii End Item Identification
general application electronics (gen-ap-e)
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Internal Configuration
junction contact
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
300.0 maximum breakover voltage, dc
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Current Rating Per Characteristic
80.00 amperes maximum average forward current averaged over a full 60-hz cycle
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Power Rating Per Characteristic
500.0 milliwatts maximum peak gate power dissipation
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Special Features
junction pattern arrangement: pnpn
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Overall Length
0.625 inches nominal
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Terminal Length
0.420 inches nominal
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Terminal Type And Quantity
2 tab, solder lug and 1 case