NSN: 5961-00-880-0581
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Channel Polarity And Control Type
n-channel junction type
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Terminal Circle Diameter
0.081 inches maximum
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead
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Specification/Standard Data
80131-release2812 professional/industrial association specification
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Power Rating Per Characteristic
100.0 milliwatts maximum collector power dissipation
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Voltage Rating In Volts Per Characteristic
6.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, collector-to-emitter, base open
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Internal Configuration
field effect
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Overall Diameter
0.240 inches maximum
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Terminal Length
1.500 inches minimum
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Overall Length
0.410 inches maximum