NSN: 5961-00-881-7060
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
90.0 watts small-signal input power, common-collector minimum
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Inclosure Material
metal
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Internal Configuration
field effect
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Semiconductor Material
germanium
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Mounting Method
unthreaded hole
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Current Rating Per Characteristic
5.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum
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Test Data Document
28527-2156874 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, emitter-to-base, collector open
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Mounting Facility Quantity
2
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Overall Length
0.410 inches maximum
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Terminal Type And Quantity
1 case and 2 pin
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Features Provided
hermetically sealed case
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Overall Diameter
0.800 inches maximum
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Special Features
junction pattern arrangement: pnp
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction