NSN: 5961-00-901-5422
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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~1
total value, gate terminal open-circuited and
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Voltage Rating In Volts Per Characteristic
6.0 maximum peak positive gate voltage and 6.0 maximum peak negative gate voltage and 200.0 maximum repetitive peak reverse voltage, maximum peak total value, gate terminal open-circuited and 300.0 maximum nonrepetitive peak reverse voltage, maximum peak
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Inclosure Material
metal
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Terminal Length
1.500 inches minimum
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Current Rating Per Characteristic
0.10 amperes source cutoff current minor and 10.00 amperes source cutoff current peak and 1.60 amperes forward current, average maximum of standard range
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Semiconductor Material
silicon
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Features Provided
hermetically sealed case
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector blank and 10.0 milliwatts small-signal input power, common-collector universal
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Terminal Type And Quantity
3 uninsulated wire lead