NSN: 5961-00-902-8820
Semiconductor Devices and Associated Hardware
TRANSISTOR
- General Instrument Corporation
- Texas Instruments Incorporated
- Freescale Semiconductor Inc.
- Cohu Inc.
- Raytheon Company
- Joint Electron Device Engineering
- Rockwell Collins Inc.
- Harris Corporation
- Harris Corporation
- Agilent Technologies Inc.
- Hewlett Packard Co
- Electronic Industries Association
- Electronic Industries Association
- Military Specifications
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
10.0 maximum breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown voltage, collector-to-base, emitter open and 0.3 maximum breakdown voltage, emitter-to-base, collector open
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Mounting Method
terminal
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum and 100.00 microamperes zero-gate-voltage source current preset
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Overall Diameter
0.230 inches nominal
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Terminal Length
0.500 inches minimum
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Power Rating Per Characteristic
75.0 milliwatts small-signal input power, common-collector minimum
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Semiconductor Material
germanium
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Inclosure Material
metal
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Overall Length
0.210 inches nominal
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Terminal Type And Quantity
4 uninsulated wire lead
Related Parts by Category
Related Manufacturers
- General Instrument Corporation
- Texas Instruments Incorporated
- Freescale Semiconductor Inc.
- Cohu Inc.
- Raytheon Company
- Joint Electron Device Engineering
- Rockwell Collins Inc.
- Harris Corporation
- Harris Corporation
- Agilent Technologies Inc.
- Hewlett Packard Co
- Electronic Industries Association
- Electronic Industries Association
- Military Specifications