NSN: 5961-00-924-4465
Semiconductor Devices and Associated Hardware
TRANSISTOR
- General Electric Co
- General Electric Co
- General Electric Co
- General Electric Co
- Joint Electron Device Engineering
- Agilent Technologies Inc.
- General Electric Co
- International Diode Corp
- Sypris Electronics Llc
- Hewlett Packard Co
- E & F Electronics Inc
- Systron-Donner Corp
- Systron-Donner Corp
- Sprague Electric Co
- Electronic Industries Association
- Electronic Industries Association
- E.c.a Etablissement Central Des
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
18.0 maximum breakdown voltage, collector-to-emitter, base open and 18.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Length
0.265 inches maximum
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal
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Overall Diameter
0.205 inches maximum
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Specification/Standard Data
80131-release4159 government specification
Related Parts by Category
Related Manufacturers
- General Electric Co
- General Electric Co
- General Electric Co
- General Electric Co
- Joint Electron Device Engineering
- Agilent Technologies Inc.
- General Electric Co
- International Diode Corp
- Sypris Electronics Llc
- Hewlett Packard Co
- E & F Electronics Inc
- Systron-Donner Corp
- Systron-Donner Corp
- Sprague Electric Co
- Electronic Industries Association
- Electronic Industries Association
- E.c.a Etablissement Central Des