NSN: 5961-00-929-5014
Semiconductor Devices and Associated Hardware
TRANSISTOR
- Rca Corp
- General Electric Co
- Freescale Semiconductor Inc.
- Westinghouse Electric Corp
- Raytheon Company
- Raytheon Company
- American Reinforced Plastics Co
- Lucent Technologies Inc
- Silicon Transistor Corp
- Fairchild Semiconductor Corp
- Interstate Electronics Corporation
- Southern Avionics Co.
- Southern Avionics Co.
- Rockwell Collins Inc.
- Sypris Electronics Llc
- International Diode Corp
- Harris Corp
- Ge Aviation Systems Llc
- Itt Telecom Products Corp
- Solitron Devices Inc.
- Rca Corp
- Tyco Electronics Corporation
- Cleveland Motion Controls Inc.
- Intersil Corporation
- Intersil Corporation
- Nautel Limited
- Nautel Limited
- Stmicroelectronics Inc
- Deltyme Corporation
- Rca Corp
- Nautel Maine Inc.
- Shugart Corp
- Electronic Industries Association
- Electronic Industries Association
- Military Specifications
- Westinghouse Electric Corp
- Amp Inc
- Power Designs Inc
- Eads Deutschland T/A Cassidian
- Buerklin Ohg
- Eads Deutschland Gmbh -Verteidigung
- Toshiba Hoshasen Co. Ltd
- Rheinmetall Air Defence Ag
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
160.0 maximum collector-to-emitter, with voltage between base and emitter and 160.0 maximum collector to base voltage/static/emitter open and 140.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static,
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Height
0.450 inches maximum
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~1
collector open
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Current Rating Per Characteristic
4.00 amperes source cutoff current minimum and 8.00 amperes source cutoff current maximum
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Overall Length
1.573 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Width
1.050 inches maximum
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Specification/Standard Data
80131-release5066 professional/industrial association specification
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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- Rca Corp
- General Electric Co
- Freescale Semiconductor Inc.
- Westinghouse Electric Corp
- Raytheon Company
- Raytheon Company
- American Reinforced Plastics Co
- Lucent Technologies Inc
- Silicon Transistor Corp
- Fairchild Semiconductor Corp
- Interstate Electronics Corporation
- Southern Avionics Co.
- Southern Avionics Co.
- Rockwell Collins Inc.
- Sypris Electronics Llc
- International Diode Corp
- Harris Corp
- Ge Aviation Systems Llc
- Itt Telecom Products Corp
- Solitron Devices Inc.
- Rca Corp
- Tyco Electronics Corporation
- Cleveland Motion Controls Inc.
- Intersil Corporation
- Intersil Corporation
- Nautel Limited
- Nautel Limited
- Stmicroelectronics Inc
- Deltyme Corporation
- Rca Corp
- Nautel Maine Inc.
- Shugart Corp
- Electronic Industries Association
- Electronic Industries Association
- Military Specifications
- Westinghouse Electric Corp
- Amp Inc
- Power Designs Inc
- Eads Deutschland T/A Cassidian
- Buerklin Ohg
- Eads Deutschland Gmbh -Verteidigung
- Toshiba Hoshasen Co. Ltd
- Rheinmetall Air Defence Ag
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