NSN: 5961-00-936-7807
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.230 inches maximum
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Mounting Facility Quantity
3
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
breakdown voltage, collector-to-base, emitter open
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Current Rating Per Characteristic
10.00 milliamperes maximum collector current, instantaneous
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Maximum Operating Temp Per Measurement Point
-55.0 deg celsius case and 175.0 deg celsius case
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Special Features
high frequency low power silicon npn bjt
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
glass
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Overall Length
0.650 millimeters maximum
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Terminal Length
0.150 millimeters maximum
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Overall Height
0.150 inches maximum
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Circle Diameter
0.230 millimeters maximum
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Voltage Rating In Volts Per Characteristic
8.0 maximum breakdown voltage, collector to emitter, sustained and 15.0 maximum
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~1
ls
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Power Rating Per Characteristic
400.0 watts maximum nonreactive power input, instantaneous total, to all termina