NSN: 5961-00-947-1156

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Mounting Method

    threaded stud

  • Features Provided

    hermetically sealed case

  • Nominal Thread Size

    0.190 inches

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    4.0 watts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Test Data Document

    99971-7735908 drawing

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.310 inches maximum

  • Overall Diameter

    0.410 inches maximum

  • Mounting Facility Quantity

    1

  • Electrode Internally-Electrically Connected To Case

    base

  • Internal Junction Configuration

    npn

  • Overall Width Across Flats

    0.437 inches maximum

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage,collector-to-base,emitter open and 100.0 maximum breakdown voltage,collector-to-emitter,base open and 8.0 maximum breakdown voltage,emitter-to-base,collector open

  • Current Rating Per Characteristic

    200.00 milliamperes maximum collector current,dc

  • Thread Series Designator

    unf

Certified to
AS6081 Methods

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