NSN: 5961-00-964-6808
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
- General Electric Co
- Gilbert Engineering Co Inc/Incon
- Fairchild Semiconductor Corp
- Micro Uspd Inc
- Rockwell Collins Inc.
- Rockwell Collins Inc.
- Pd & E Electronics Llc
- U S Army Aviation And Missile
- Solid State Devices Inc.
- Semitronics Corp
- Hybrid Semiconductors & Electronics
- Electronic Industries Association
- Electronic Industries Association
- Rockwell Collins Inc.
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Inclosure Material
metal
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Current Rating Per Characteristic
0.35 amperes source cutoff current maximum
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Terminal Circle Diameter
0.100 inches nominal
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Special Features
junction pattern arrangement: pnpn
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Terminal Length
0.500 inches minimum
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakover voltage, dc
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Specification/Standard Data
80131-release3763 professional/industrial association specification
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Features Provided
hermetically sealed case
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
Related Parts by Category
Related Manufacturers
- General Electric Co
- Gilbert Engineering Co Inc/Incon
- Fairchild Semiconductor Corp
- Micro Uspd Inc
- Rockwell Collins Inc.
- Rockwell Collins Inc.
- Pd & E Electronics Llc
- U S Army Aviation And Missile
- Solid State Devices Inc.
- Semitronics Corp
- Hybrid Semiconductors & Electronics
- Electronic Industries Association
- Electronic Industries Association
- Rockwell Collins Inc.