NSN: 5961-01-006-0985

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    -40.0 maximum collector to base voltage/static/emitter open 4th transistor and -40.0 maximum collector to emitter voltage/static/base open 4th transistor

  • Terminal Type And Quantity

    16 pin

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    -10.00 milliamperes source cutoff current maximum 4th transistor

  • Current Rating Per Characteristic

    -10.00 milliamperes source cutoff current maximum 5th transistor

  • Semiconductor Material

    silicon all transistor

  • Voltage Rating In Volts Per Characteristic

    -40.0 maximum collector to base voltage/static/emitter open 5th transistor and -40.0 maximum collector to emitter voltage/static/base open 5th transistor

  • Component Name And Quantity

    5 transistor

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Inclosure Material

    plastic

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum collector to base voltage/static/emitter open 1st transistor and 35.0 maximum collector to emitter voltage/static/base open 1st transistor

  • Power Rating Per Characteristic

    750.0 milliwatts small-signal input power, common-collector absolute all transistor

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum 1st transistor

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum 2nd transistor

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum 3rd transistor

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum collector to base voltage/static/emitter open 2nd transistor and 35.0 maximum collector to emitter voltage/static/base open 2nd transistor

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum collector to base voltage/static/emitter open 3rd transistor and 35.0 maximum collector to emitter voltage/static/base open 3rd transistor

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