NSN: 5961-01-009-6316
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Precious Material And Location
landsurface gold
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Current Rating Per Characteristic
300.00 milliamperes source cutoff current maximum
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Mounting Method
press fit
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Inclosure Material
metal
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Terminal Type And Quantity
4 case
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Internal Junction Configuration
pnp
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Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Height
0.033 inches nominal
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Precious Material
gold
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Width
0.042 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector minimum
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Overall Length
0.078 inches maximum