NSN: 5961-01-010-1501
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current,dc
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Power Rating Per Characteristic
70.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-41
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
pnp
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage,collector-to-base,emitter open and 45.0 maximum breakdown voltage,collector-to-emitter,base open and 30.0 maximum breakdown voltage,emitter-to-base,collector open
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Terminal Type And Quantity
1 case and 2 tab,solder lug
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Inclosure Material
metal