NSN: 5961-01-018-1958
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
7.5 millimeters maximum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
20.0 maximum collector to emitter voltage/static/base open and 40.0 maximum collector to base voltage/static/emitter open and 3.0 maximum emitter to base voltage, static, collector open
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Terminal Type And Quantity
4 ribbon
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
3.75 watts small-signal input power, common-collector preset
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Current Rating Per Characteristic
150.00 milliamperes source cutoff current maximum
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Overall Length
5.6 millimeters maximum
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Mounting Method
terminal