NSN: 5961-01-021-5632

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Overall Length

  0.187 inches maximum

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  terminal

• Overall Diameter

  0.370 inches maximum

• Terminal Circle Diameter

  0.245 inches maximum

• Voltage Rating In Volts Per Characteristic

  5.0 maximum reverse voltage, peak 1st semiconductor device diode

• Terminal Type And Quantity

  12 uninsulated wire lead

• Features Provided

  hermetically sealed case

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Voltage Rating In Volts Per Characteristic

  5.0 maximum reverse voltage, peak 2nd semiconductor device diode

• Component Name And Quantity

  6 semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  5.0 maximum reverse voltage, peak 3rd semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  5.0 maximum reverse voltage, peak 4th semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  5.0 maximum reverse voltage, peak 5th semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  0.5 maximum reverse voltage, peak 6th semiconductor device diode

• Terminal Length

  0.500 inches minimum

• Inclosure Material

  metal

• Current Rating Per Characteristic

  25.00 milliamperes source cutoff current preset all semiconductor device diode

• Power Rating Per Characteristic

  600.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode