NSN: 5961-01-025-6193
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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End Item Identification
an/tpb-1c radar bomb dir set
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
1.308 inches minimum and 1.385 inches maximum
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector preset
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Current Rating Per Characteristic
10.00 amperes zero-gate-voltage source current blank and 4.00 amperes zero-gate-voltage source current maximum of standard range
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
300.0 maximum breakdown voltage, collector-to-emitter, base open and 700.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Width
1.050 inches minimum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Overall Height
0.660 inches minimum and 0.798 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal