NSN: 5961-01-029-9163
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.360 inches maximum
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
voltage, static, collector open
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage/static/emitter open and 100.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 70.0 maximum collector to emitter reverse voltage and 7.0 maximum emitter to base
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Current Rating Per Characteristic
7.00 amperes maximum base current, dc and 15.00 amperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
115.0 watts maximum total power dissipation
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Test Data Document
80063-sm-b-650729 drawing
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case