NSN: 5961-01-035-1856

Technical Characteristics

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  35.0 maximum drain to gate voltage and 35.0 maximum drain to source voltage and 50.0 maximum gate to source voltage

• Current Rating Per Characteristic

  30.00 milliamperes maximum drain current

• Power Rating Per Characteristic

  300.0 milliwatts maximum total device dissipation

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius ambient air

• Terminal Type And Quantity

  3 uninsulated wire lead

• Inclosure Material

  metal

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Terminal Length

  0.500 inches minimum

• Internal Configuration

  field effect

• Channel Polarity And Control Type

  p-channel insulated gate type

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.100 inches nominal

• Features Provided

  hermetically sealed case