NSN: 5961-01-036-5097

Technical Characteristics

• Internal Configuration

  junction contact all semiconductor device diode

• Overall Length

  0.140 inches minimum all semiconductor device diode and 0.160 inches maximum all semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Current Rating Per Characteristic

  200.00 milliamperes forward current, average absolute all semiconductor device diode and 1.00 amperes forward current, average preset all semiconductor device diode

• Overall Diameter

  0.056 inches minimum all semiconductor device diode and 0.075 inches maximum all semiconductor device diode

• Component Function Relationship

  matched

• Semiconductor Material

  silicon all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Special Features

  forward voltages at 100 microamperes matched w/in 50 millivolts.

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction all semiconductor device diode

• Component Name And Quantity

  8 semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode and 1.500 inches maximum all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, dc all semiconductor device diode and 75.0 maximum working peak reverse voltage all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode