NSN: 5961-01-051-6655
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Special Features
the ceramic body of this device contains beryllium oxide. do not crush,grind or abrade these portions because the dust resulting from such action may be hazardous if inhaled,disposal should be in accordance with federal and state regulations; t.o
-
Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector absolute
-
Overall Length
0.890 inches minimum and 0.910 inches maximum
-
Internal Configuration
junction contact
-
Semiconductor Material
silicon
-
Terminal Type And Quantity
2 ribbon and 1 tab, solder lug
-
Mounting Facility Quantity
2
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
End Item Identification
an/fps-115
-
Voltage Rating In Volts Per Characteristic
65.0 maximum collector to base voltage/static/emitter open and 25.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, instantaneous
-
~1
31p6-2fps115-62; n/h/a radar transmitter; junction pa
-
Overall Height
0.240 inches maximum
-
Overall Width
0.376 inches minimum and 0.410 inches maximum
-
Inclosure Material
ceramic
-
Current Rating Per Characteristic
5.00 amperes source cutoff current maximum