NSN: 5961-01-053-3316
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.240 inches maximum
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Overall Width
0.376 inches minimum and 0.410 inches maximum
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Inclosure Material
ceramic
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Precious Material
gold
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Special Features
t.o. 31p6-2fps115-62; n/h/a rf amplifier; junction pattern arrangement: npn
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Overall Length
0.890 inches minimum and 0.910 inches maximum
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Internal Configuration
junction contact
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Terminal Type And Quantity
2 ribbon and 1 case
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Voltage Rating In Volts Per Characteristic
25.0 maximum collector to emitter voltage/static/base open and 65.0 maximum collector to base voltage/static/emitter open and 4.0 maximum emitter to base voltage, instantaneous
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Test Data Document
49956-914509 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Semiconductor Material
silicon
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Precious Material And Location
plated leads gold
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Electrode Internally-Electrically Connected To Case
base
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Power Rating Per Characteristic
80.0 watts small-signal input power, common-collector absolute
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End Item Identification
an/fps-115