NSN: 5961-01-058-6626

Technical Characteristics

• Semiconductor Material

  silicon

• Test Data Document

  99971-7536771 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Terminal Type And Quantity

  2 ribbon and 1 threaded stud

• Nominal Thread Size

  0.164 inches

• Internal Configuration

  junction contact-darlington connected

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  metal

• Overall Length

  0.120 inches minimum and 0.140 inches maximum

• Mounting Method

  threaded stud

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 33.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open

• Mounting Facility Quantity

  1

• Thread Series Designator

  unc

• Overall Diameter

  0.300 inches maximum

• Power Rating Per Characteristic

  2.1 watts small-signal input power, common-collector absolute

• Electrode Internally-Electrically Connected To Case

  emitter

• Special Features

  junction pattern arrangement: npn

• Current Rating Per Characteristic

  250.00 milliamperes source cutoff current maximum