NSN: 5961-01-062-0662

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Power Rating Per Characteristic

    300.0 watts small-signal input power, common-collector preset

  • Test Data Document

    88818-a532a035 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Length

    0.416 inches minimum and 0.450 inches maximum

  • Overall Diameter

    0.800 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    60.00 amperes source cutoff current maximum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Voltage Rating In Volts Per Characteristic

    8.0 maximum emitter to base voltage, static, collector open and 90.0 maximum collector to base voltage/static/emitter open and 70.0 maximum breakdown voltage, collector to emitter, sustained

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Inclosure Material

    metal

  • Mounting Method

    unthreaded hole

  • Mounting Facility Quantity

    2

Certified to
AS6081 Methods

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