NSN: 5961-01-081-0241
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
ceramic
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Mounting Facility Quantity
1
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Power Rating Per Characteristic
2.2 watts small-signal input power, common-collector absolute
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Current Rating Per Characteristic
120.00 milliamperes source cutoff current minimum and 8.00 amperes source cutoff current maximum
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Electrode Internally-Electrically Connected To Case
gate
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
silicon
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Overall Length
0.633 inches minimum and 0.643 inches maximum
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Overall Width
0.495 inches minimum and 0.503 inches maximum
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Mounting Method
unthreaded hole
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Terminal Type And Quantity
3 pin
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Overall Height
0.125 inches minimum and 0.135 inches maximum