NSN: 5961-01-082-1981

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Overall Diameter

    0.230 inches maximum

  • Terminal Type And Quantity

    8 uninsulated wire lead

  • Internal Configuration

    field effect-dual gate

  • Current Rating Per Characteristic

    10.00 milliamperes zero-gate-voltage source current megawatts

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    500.0 milliwatts small-signal input power, common-collector absolute

  • Special Features

    minimum boltage ratting

  • Terminal Length

    0.500 inches minimum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    t0-71

  • Inclosure Material

    metal

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

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