NSN: 5961-01-082-4429
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact-darlington connected
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Mounting Method
press fit
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum repetitive peak reverse voltage and 100.0 maximum repetitive peak off-state voltage
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Terminal Type And Quantity
2 uninsulated wire lead
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Internal Junction Configuration
pnpn
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Current Rating Per Characteristic
30.00 amperes maximum peak on-state surge current and 4.00 amperes maximum on-state current, rms total
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Power Rating Per Characteristic
0.5 watts maximum peak gate power dissipation