NSN: 5961-01-089-0775
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.380 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Thread Series Designator
unc
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Terminal Type And Quantity
4 ribbon
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Overall Length
0.285 inches nominal
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.164 inches
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
33.0 maximum breakdown voltage,collector-to-emitter,base open and 60.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 4.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
0.50 amperes maximum collector current,dc
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Power Rating Per Characteristic
10.0 watts maximum total power dissipation
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Unpackaged Unit Weight
0.250 ounces
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Test Data Document
00724-95-00296 drawing