NSN: 5961-01-097-2021

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Overall Length

    0.340 inches maximum

  • Specification/Standard Data

    80131-release6368 professional/industrial association specification

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-66

  • Electrode Internally-Electrically Connected To Case

    collector

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    80.00 milliamperes source cutoff current minimum and 4.00 amperes source cutoff current maximum

  • Special Features

    junction pattern arrangement: pnp

  • Power Rating Per Characteristic

    50.0 watts small-signal input power, common-collector minimum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    1 case and 2 pin

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Diameter

    0.620 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...