NSN: 5961-01-097-2023
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.405 inches nominal
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 3.0 maximum emitter to base voltage,dc
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Power Rating Per Characteristic
18.4 watts maximum reverse power dissipation,dc
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Precious Material And Location
terminal surfaces gold
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Test Data Document
97942-584r531 drawing
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Overall Length
0.230 inches maximum
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Features Provided
gold plated leads and hermetically sealed case
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Current Rating Per Characteristic
5.00 milliamperes maximum collector cutoff current,dc,with base short-circuited to emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material
gold
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Terminal Type And Quantity
1 flange and 2 pin