NSN: 5961-01-100-7685

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-66

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    3.00 amperes maximum collector current,dc and 2.00 amperes maximum base current,dc

  • Power Rating Per Characteristic

    20.0 watts maximum total power dissipation

  • Terminal Type And Quantity

    1 case and 2 pin

  • Overall Length

    0.075 inches maximum

  • Overall Diameter

    0.620 inches maximum

  • Mounting Facility Quantity

    2

  • Internal Junction Configuration

    npn

  • Mounting Method

    unthreaded hole

  • ~1

    voltage between base and emitter and 7.0 maximum emitter to base voltage,static,collector open

  • Voltage Rating In Volts Per Characteristic

    140.0 maximum collector to base voltage/static/emitter open and 120.0 maximum collector to emitter voltage/static/base open and 130.0 maximum collector to emitter reverse voltage and 140.0 maximum breakdown voltage,collector to emitter,with specified

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

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