NSN: 5961-01-103-7825
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector preset
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
0.50 milliamperes source cutoff current maximum
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Overall Diameter
0.240 inches maximum
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Precious Material And Location
external surfaces gold
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.170 inches maximum
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum breakdown voltage, emitter-to-base, collector open and 50.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter
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Inclosure Material
ceramic
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Terminal Type And Quantity
4 flange
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Precious Material
gold
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Special Features
minimum voltage; junction pattern arrangement: npn