NSN: 5961-01-103-7827
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Length
0.170 inches maximum
-
Mounting Facility Quantity
2
-
Internal Configuration
junction contact
-
Internal Junction Configuration
npn
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
~1
breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown vo
-
Current Rating Per Characteristic
1.25 milliamperes maximum collector current, dc
-
Precious Material And Location
external surfaces gold
-
Inclosure Material
ceramic
-
Overall Diameter
0.240 inches maximum
-
Mounting Method
unthreaded hole
-
~2
ltage, collector-to-emitter, with base short-circuited to emitter
-
Voltage Rating In Volts Per Characteristic
3.5 maximum breakdown voltage, emitter-to-base, collector open and 45.0 maximum
-
Power Rating Per Characteristic
5.0 watts maximum total power dissipation
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Special Features
minimum voltage
-
Precious Material
gold
-
Terminal Type And Quantity
4 flange