NSN: 5961-01-106-5405
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
65.0 maximum collector to base voltage/static/emitter open and 30.0 maximum collector to emitter voltage/static/base open and 70.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximum emitter to base voltage,
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~1
static, collector open
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Overall Height
0.300 inches maximum
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Overall Length
1.085 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Power Rating Per Characteristic
270.0 watts small-signal input power, common-collector absolute
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Internal Configuration
junction contact-double base
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Mounting Facility Quantity
1
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Special Features
contains beryllium oxide; junction pattern arrangement: npn
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Terminal Type And Quantity
3 ribbon
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Current Rating Per Characteristic
3.00 amperes source cutoff current minimum and 20.00 amperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Width
0.850 inches maximum
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Inclosure Material
ceramic and metal