NSN: 5961-01-109-2326
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.260 inches maximum
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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~2
age, collector-to-emitter, base open
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum
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~1
, dc
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Current Rating Per Characteristic
2.00 amperes maximum collector current, dc and 1.00 amperes maximum base current
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Power Rating Per Characteristic
10.0 watts maximum collector power dissipation
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Terminal Length
1.500 inches minimum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact-darlington connected
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
emitter to base voltage, static, collector open and 75.0 maximum breakdown volt
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Transfer Ratio
130.0 maximum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead