NSN: 5961-01-109-2326

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.260 inches maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    npn

  • ~2

    age, collector-to-emitter, base open

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum

  • ~1

    , dc

  • Current Rating Per Characteristic

    2.00 amperes maximum collector current, dc and 1.00 amperes maximum base current

  • Power Rating Per Characteristic

    10.0 watts maximum collector power dissipation

  • Terminal Length

    1.500 inches minimum

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact-darlington connected

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    emitter to base voltage, static, collector open and 75.0 maximum breakdown volt

  • Transfer Ratio

    130.0 maximum static forward current transfer ratio, common-emitter

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

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