NSN: 5961-01-121-7914
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.650 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
16.0 watts maximum peak gate power dissipation
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Special Features
junction pattern arrangement: pnpn
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Height
0.190 inches maximum
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Overall Width
0.420 inches maximum
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Mounting Facility Quantity
1
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
600.0 maximum repetitive peak reverse voltage and 600.0 maximum repetitive peak off-state voltage
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Current Rating Per Characteristic
8.00 amperes maximum on-state current, rms total