NSN: 5961-01-122-2554
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 10.00 amperes source cutoff current maximum
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Internal Junction Configuration
npn
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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End Item Identification
4920-01-054-8585 e/i fscm 81755
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
225.0 watts small-signal input power, common-collector minimum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
0.250 inches minimum and 0.450 inches maximum