NSN: 5961-01-140-4368

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Inclosure Material

    metal

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage,collector-to-emitter,base open and 80.0 maximum breakdown voltage,collector-to-emitter,with specified circuit between base and emitter and 100.0 maximum collector to base voltage,dc and 7.0 maximum emitter to base voltage,dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Overall Length

    1.573 inches maximum

  • Overall Height

    0.450 inches maximum

  • Overall Width

    1.050 inches maximum

  • End Item Identification

    mission sim 81205

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Internal Junction Configuration

    npn

  • Current Rating Per Characteristic

    20.00 amperes maximum collector current,dc and 5.00 amperes maximum base current,dc

  • Power Rating Per Characteristic

    200.0 watts maximum total device dissipation

  • Terminal Type And Quantity

    1 case and 2 pin

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