NSN: 5961-01-145-8747

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Power Rating Per Characteristic

    375.0 milliwatts small-signal input power, common-collector absolute

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • End Item Identification

    4935nc400005h 81205

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum of standard range

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    25.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 125.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

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