NSN: 5961-01-160-8703
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-3
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector minimum
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Overall Width
1.050 inches maximum
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Current Rating Per Characteristic
5.00 amperes repetitive peak forward current blank and 2.00 amperes repetitive peak forward current maximum
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Semiconductor Material
silicon
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Test Data Document
02735-66969 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
6.0 maximum emitter to base voltage, static, collector open and 375.0 maximum breakdown voltage, collector-to-base, emitter open and 300.0 maximum breakdown voltage, collector-to-emitter, base open
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Mounting Facility Quantity
2
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Overall Length
1.421 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Transfer Ratio
80.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Terminal Type And Quantity
2 unthreaded hole and 1 case
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Overall Height
0.450 inches maximum