NSN: 5961-01-164-8396

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.135 inches nominal

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    100.00 milliamperes minimum collector current,dc and 500.00 milliamperes maximum collector current,dc

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Inclosure Material

    plastic

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.205 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    t0-92

  • Internal Junction Configuration

    npn

  • ~1

    base voltage,static,collector open

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to base voltage/static/emitter open and 40.0 maximum collector to emitter reverse voltage,with base short-circuited to emitter and 15.0 maximum collector-to-emitter,substaining voltage,base open-circuited and 4.5 maximum emitter to

  • Power Rating Per Characteristic

    0.5 milliwatts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

Certified to
AS6081 Methods

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