NSN: 5961-01-167-8192
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.250 inches nominal
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
m100.0 maximum collector to base voltage/static/emitter open and m100.0 maximum collector-to-emitter substaining voltage,with voltage between base and emitter and m7.0 maximum emitter to base voltage,static,collector open
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Power Rating Per Characteristic
10.0 watts maximum total power dissipation
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Transfer Ratio
130.0 maximum static forward current transfer ratio,common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.352 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
burn in and hermetically sealed case
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Current Rating Per Characteristic
m2.00 amperes maximum collector current,dc and m1.00 amperes maximum base current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction