NSN: 5961-01-168-3893

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    1.573 inches maximum

  • Overall Height

    0.450 inches maximum

  • Internal Configuration

    junction contact-darlington connected

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Internal Junction Configuration

    pnp

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 60.0 maximum breakdown voltage, collector-to-emitter, base open

  • Power Rating Per Characteristic

    150.0 watts maximum collector power dissipation

  • Terminal Type And Quantity

    2 pin and 1 case

  • Overall Width

    1.050 inches maximum

  • Mounting Facility Quantity

    2

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    12.00 amperes maximum collector current, dc and 200.00 milliamperes maximum base current, dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

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