NSN: 5961-01-168-6508

Technical Characteristics

• ~1

  all transistor and 8.0 maximum emitter to base

• Voltage Rating In Volts Per Characteristic

  650.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter all transistor and 400.0 maximum collector to emitter voltage/static/base open all transistor and 650.0 maximum collector to base voltage/static/emitter open

• Power Rating Per Characteristic

  175.0 watts small-signal input power, common-collector preset all transistor

• Component Function Relationship

  matched

• Electrode Internally-Electrically Connected To Case

  collector all transistor

• Response Time

  0.6 microseconds maximum all transistor

• Overall Length

  1.573 inches maximum all transistor

• Semiconductor Material

  silicon all transistor

• Terminal Type And Quantity

  2 pin all transistor and 1 case all transistor

• Internal Junction Configuration

  npn all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air all transistor

• Internal Configuration

  junction contact all transistor

• Overall Width

  1.050 inches maximum all transistor

• Inclosure Material

  metal all transistor

• Component Name And Quantity

  2 transistor

• Mounting Method

  unthreaded hole all transistor

• Test Data Document

  94117-1064780 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Current Rating Per Characteristic

  5.00 amperes source cutoff current minimum all transistor and 15.00 amperes source cutoff current maximum all transistor

• Mounting Facility Quantity

  2 all transistor

• Field Force Effect Type

  electrostatic charge

• Overall Height

  0.380 inches maximum all transistor