NSN: 5961-01-169-4677

Technical Characteristics

• ~1

  100.0 nominal collector-to-emitter voltage, in

• Voltage Rating In Volts Per Characteristic

  5.0 nominal base to emitter voltage, instantaneous and 5.0 nominal emitter to base voltage, instantaneous and 100.0 nominal collector-to-emitter, substaining voltage, base open-circuited and 60.0 nominal collector to emitter voltage/static/base open and

• Semiconductor Material

  silicon

• Inclosure Material

  plastic

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Current Rating Per Characteristic

  4.00 amperes base current, dc nanoamperes