NSN: 5961-01-171-1969
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.546 inches nominal
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Inclosure Material
plastic and metal
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220ab
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage/static/base open and 80.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 7.0 maximum emitter to base voltage, static, collector open
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Special Features
junction pattern arrangement: npn
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Overall Width
0.400 inches nominal
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Semiconductor Material
silicon
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Current Rating Per Characteristic
1.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Terminal Type And Quantity
3 pin
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector absolute
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Overall Length
0.705 inches nominal
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Terminal Length
0.381 inches nominal