NSN: 5961-01-173-7362

Technical Characteristics

• Power Rating Per Characteristic

  0.75 watts small-signal input power, common-collector absolute all semiconductor device diode

• Response Time

  35.0 nanoseconds maximum all semiconductor device diode

• Current Rating Per Characteristic

  1.50 amperes source cutoff current maximum all semiconductor device diode

• Terminal Type And Quantity

  14 pin

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  4 semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to base voltage, dc all semiconductor device diode and 40.0 maximum collector to emitter voltage, dc all semiconductor device diode and 6.0 maximum emitter to base voltage, dc all semiconductor device diode

• Special Features

  all semiconductor device diode junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Terminal Length

  0.100 inches minimum

• Overall Width

  0.015 inches maximum

• Overall Length

  0.785 inches maximum

• Capacitance Rating In Picofarads

  10.0 maximum all semiconductor device diode

• Transfer Ratio

  60.0 maximum static forward current transfer ratio, common-emitter all semiconductor device diode

• Mounting Method

  terminal

• Overall Height

  0.200 inches maximum

• Inclosure Material

  ceramic

• Semiconductor Material

  silicon all semiconductor device diode