NSN: 5961-01-177-1335

Technical Characteristics

• Test Data Document

  80009-151-0139-00 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current maximum all transistor

• Power Rating Per Characteristic

  400.0 milliwatts small-signal input power, common-collector absolute all transistor

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Overall Length

  0.260 inches maximum

• Overall Diameter

  0.370 inches maximum

• Semiconductor Material

  silicon all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-77

• Features Provided

  hermetically sealed case

• Special Features

  all transistor junction pattern arrangement: npn

• Voltage Rating In Volts Per Characteristic

  20.0 maximum breakdown voltage, collector-to-base, emitter open all transistor and 12.0 maximum breakdown voltage, collector-to-emitter, base open all transistor and 4.5 maximum breakdown voltage, emitter-to-base, collector open all transistor

• Terminal Length

  0.500 inches minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  2 transistor

• Terminal Type And Quantity

  6 uninsulated wire lead

• Inclosure Material

  metal