NSN: 5961-01-180-4073
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Width
0.165 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Current Rating Per Characteristic
80.00 milliamperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
plastic
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Overall Length
0.205 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Height
0.270 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-92
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
12.0 maximum breakdown voltage,collector-to-base,emitter open and 12.0 maximum breakdown voltage,collector-to-emitter,base open and 4.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
600.0 milliwatts maximum collector power dissipation
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Transfer Ratio
20.0 maximum small-signal short-circuit forward current transfer ratio,common-emitter