NSN: 5961-01-185-9478
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Method
press fit
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 8.0 maximum
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~1
nt, dc
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Current Rating Per Characteristic
20.00 amperes maximum collector current, dc and 10.00 amperes maximum base curre
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Power Rating Per Characteristic
1.2 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Specification/Standard Data
80131-release5175b professional/industrial association specification
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Terminal Type And Quantity
3 uninsulated wire lead
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Transfer Ratio
150.0 maximum static forward current transfer ratio, common-emitter
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~2
age, collector-to-emitter, base open
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~1
emitter to base voltage, static, collector open and 80.0 maximum breakdown volt
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Overall Width
0.710 inches maximum
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Overall Height
0.200 inches maximum
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Overall Length
1.420 inches maximum